Title:
PRODUCTION METHOD FOR SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2016/006442
Kind Code:
A1
Abstract:
This production method for a silicon carbide single crystal is provided with: a step for preparing a support member (20b) which is provided with a bonding section (Bp), and a stepped section (Sp) provided to at least a portion of the periphery of the bonding section (Bp); and a step in which a buffer material (2) is provided to the stepped section (Sp). The bonding section (Bp) and the buffer material (2) form a support surface (Sf). The production method is further provided with: a step in which a seed crystal (10) is provided to the support surface (Sf), and the bonding section (Bp) and the seed crystal (10) are bonded together; and a step in which a single crystal (11) is grown on the seed crystal (10).
Inventors:
KAWASE TOMOHIRO (JP)
Application Number:
PCT/JP2015/068162
Publication Date:
January 14, 2016
Filing Date:
June 24, 2015
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/36; C30B23/06
Foreign References:
| JP2011207691A | 2011-10-20 | |||
| JP2011190129A | 2011-09-29 | |||
| JP2010280547A | 2010-12-16 | |||
| JP2004269297A | 2004-09-30 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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