Title:
PRODUCTION METHOD OF SOI WAFER, AND SOI WAFER
Document Type and Number:
WIPO Patent Application WO/2014/118851
Kind Code:
A1
Abstract:
The present invention is a production method of an SOI wafer for producing an SOI wafer, which is characterized in that: after subjecting a bonding surface of a bond wafer and/or a bonding surface of a base wafer to a plasma treatment, the bond wafer and the base wafer are bonded with each other with an oxide film being interposed therebetween; and the bond wafer is separated at an ion-implanted layer by a separation heat treatment by performing a first step wherein a heat treatment at a temperature of 250°C or less is carried out for 2 hours or more and a second step wherein a heat treatment at a temperature from 400°C to 450°C (inclusive) is carried out for 30 minutes or more. Consequently, there can be provided a method for producing an SOI wafer which has a small SOI layer thickness range, a low surface roughness in the SOI layer surface and a terrace part with a smooth shape, while having no defects such as voids and blisters in the SOI layer.
Inventors:
KOBAYASHI NORIHIRO (JP)
YOKOKAWA ISAO (JP)
AGA HIROJI (JP)
YOKOKAWA ISAO (JP)
AGA HIROJI (JP)
Application Number:
PCT/JP2013/007248
Publication Date:
August 07, 2014
Filing Date:
December 10, 2013
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/02; H01L21/265; H01L27/12
Domestic Patent References:
| WO2010050556A1 | 2010-05-06 |
Foreign References:
| JP2001503568A | 2001-03-13 | |||
| JP2011135051A | 2011-07-07 | |||
| JPH05211128A | 1993-08-20 | |||
| JP2003347526A | 2003-12-05 | |||
| JP2006210898A | 2006-08-10 | |||
| JP2007500435A | 2007-01-11 | |||
| JP2008513989A | 2008-05-01 | |||
| JP2002305292A | 2002-10-18 |
Other References:
See also references of EP 2953153A4
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (JP)
Good Miya Mikio (JP)
Good Miya Mikio (JP)
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