PRODUCTION METHOD OF SUBSTRATE WITH TRANSPARENT CONDUCTIVE FILM, PRODUCTION DEVICE OF SUBSTRATE WITH TRANSPARENT CONDUCTIVE FILM, AND TRANSPARENT CONDUCTIVE FILM

WIPO Patent Application WO/2018/047977

A1

This method for producing a substrate with a transparent conductive film, in which the transparent conductive film is arranged contacting an insulating transparent substrate, involves, in order, at least: a step α in which, in a heat treatment space brought to a prescribed reduced pressure atmosphere, the transparent substrate is controlled to a prescribed pre-deposition temperature; a step β in which, in a deposition space set to a desired process gas atmosphere, a sputter voltage is applied to perform sputtering on a target that constitutes the base material of the transparent conductive film, and the transparent conductive film is formed on the transparent substrate which has been brought to a prescribed temperature; and a step γ in which, in an air atmosphere, the transparent conductive film formed on the transparent substrate is subjected to a post-heating treatment. The pre-deposition temperature in step α is less than or equal to zero degrees.

OONO YUKIAKI (JP)
TAKAHASHI HIROHISA (JP)
SHIRAI MASANORI (JP)
KOBAYASHI MOTOSHI (JP)

PCT/JP2017/032929

March 15, 2018

September 12, 2017

Click for automatic bibliography generation  

ULVAC INC (JP)

C23C14/02; C23C14/08; C23C14/34; C23C14/58; G06F3/041; H01B13/00

WO2014098131A1

2014-06-26

JPH07150353A	1995-06-13
JP2015127443A	2015-07-09
JP2015193882A	2015-11-05
JP2014080655A	2014-05-08

OIKAWA Shu et al. (JP)

View/Download PDF      PDF Help

Previous Patent: TRYPTOPHAN OXIDASE AND USE THEREOF

Next Patent: FERROMAGNETIC MATERIAL SPUTTERING TARGET