Title:
PROGRAM CIRCUIT, SEMICONDUCTOR INTEGRATED CIRCUIT, VOLTAGE APPLICATION METHOD, CURRENT APPLICATION METHOD, AND COMPARISON METHOD
Document Type and Number:
WIPO Patent Application WO/2007/063655
Kind Code:
A1
Abstract:
There is provided a program circuit that can reduce the impoverishment of a switching
element using the oxidation-reduction reaction of an electrolytic material.
A voltage source (106) applies a voltage to a switching element (100). A measurement
circuit (107) measures a parameter that varies according to the resistance of
the switching element (100). A control circuit (104) increases the voltage applied
to the switching element (100) by the voltage source (106) until the parameter
measured by the measurement circuit (107) reaches a predetermined value. When
the parameter measured by the measurement circuit (107) reaches the predetermined
value, the control circuit (104) commands the voltage source (106) to stop voltage
application.
Inventors:
KAERIYAMA SHUNICHI (JP)
MIZUNO MASAYUKI (JP)
MIZUNO MASAYUKI (JP)
Application Number:
PCT/JP2006/321105
Publication Date:
June 07, 2007
Filing Date:
October 24, 2006
Export Citation:
Assignee:
NEC CORP (JP)
KAERIYAMA SHUNICHI (JP)
MIZUNO MASAYUKI (JP)
KAERIYAMA SHUNICHI (JP)
MIZUNO MASAYUKI (JP)
International Classes:
H03K5/00; G11C13/00; H01L29/66
Foreign References:
| JP2005101535A | 2005-04-14 |
Other References:
KAERIYAMA S. ET AL: "A nonvolatile programmable solid-electrolyte nanometer switch", IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 40, no. 1, January 2005 (2005-01-01), pages 168 - 176, XP003013649
Attorney, Agent or Firm:
MIYAZAKI, Teruo et al. (16th Kowa Bldg. 9-20, Akasaka 1-chom, Minato-ku Tokyo 52, JP)
Download PDF: