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Title:
PROGRAMMABLE RESISTANCE MEMORY ELEMENT AND METHOD FOR MAKING SAME
Document Type and Number:
WIPO Patent Application WO2003067633
Kind Code:
A3
Abstract:
A programmable resistance memory element using a conductive sidewall layer (134) as the bottom electrode. The programmable resistance memory material (210) deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material.

Inventors:
MAIMON JON
Application Number:
PCT/US2003/003863
Publication Date:
October 16, 2003
Filing Date:
February 06, 2003
Export Citation:
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Assignee:
OVONYX INC (US)
International Classes:
G11C11/56; H01L21/00; H01L21/06; H01L21/20; H01L21/82; H01L21/8234; H01L21/8244; H01L29/00; H01L45/00; H01L47/00; H01L; (IPC1-7): H01L47/00; H01L29/00; H01L21/00; H01L21/06; H01L21/82; H01L21/8234; H01L21/8244; H01L21/20
Foreign References:
US5952671A1999-09-14
US6114713A2000-09-05
US5998244A1999-12-07
US6111264A2000-08-29
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