Title:
PROPORTIONAL MICROMECHANICAL DEVICE
Document Type and Number:
WIPO Patent Application WO2000014415
Kind Code:
A3
Abstract:
The present invention provides a proportional microvalve (10) having a first (12), second (14) and third layer (16), and having high aspect ratio geometries. The first layer (12) defines a cavity (24) with inlet (20) and outlet (22) ports. The second layer (14), doped to have a low resistivity and bonded between the first (12) and third (16) layers, defines a cavity (24) having a flow area to permit fluid flow between the inlet (20) and outlet (22) ports. The second layer (14) further defines an actuatable displaceable member (26), and one or more thermal actuators (28, 30) for actuating the displaceable member (26) to a position between and including an open and a closed position to permit or occlude fluid flow. The third layer (16) provides one wall of the cavity (24) and provides electrical contacts (32a, 32b, 34a, 34b) for electrically heating the thermally expandable actuators (28, 30). The thermal actuators (28, 30) and the displaceable member (26) have high aspect ratios and are formed by deep reactive ion etching such that they are displaceable in the plane of the second layer (14) while being very stiff out of the plane. Thus, both actuation and displacement of the displaceable member (26) are in the plane of the layer.
Inventors:
MALUF NADIM I (US)
WILLIAMS KIRT R (US)
VAN DRIEENHUIZEN BERT P (US)
FULLER EDWARD NELSON (US)
BARRON RICHARD J (US)
WILLIAMS KIRT R (US)
VAN DRIEENHUIZEN BERT P (US)
FULLER EDWARD NELSON (US)
BARRON RICHARD J (US)
Application Number:
PCT/US1999/019971
Publication Date:
July 06, 2000
Filing Date:
August 31, 1999
Export Citation:
Assignee:
LUCAS NOVASENSOR (US)
MALUF NADIM I (US)
WILLIAMS KIRT R (US)
DRIEENHUIZEN BERT P VAN (US)
FULLER EDWARD NELSON (US)
BARRON RICHARD J (US)
MALUF NADIM I (US)
WILLIAMS KIRT R (US)
DRIEENHUIZEN BERT P VAN (US)
FULLER EDWARD NELSON (US)
BARRON RICHARD J (US)
International Classes:
B60T8/36; B81B3/00; F15C3/00; F15C5/00; F16K31/00; F16K31/02; F16K31/18; F16K99/00; (IPC1-7): F15C5/00; B60T8/36
Domestic Patent References:
| WO1999016096A1 | 1999-04-01 |
Foreign References:
| DE4101575A1 | 1992-07-23 | |||
| DE4417251A1 | 1995-11-23 | |||
| US5238223A | 1993-08-24 | |||
| US5065978A | 1991-11-19 | |||
| DE4422942A1 | 1996-01-04 | |||
| US5179499A | 1993-01-12 |
Other References:
NOWOROLSKI J M ET AL: "Process for in-plane and out-of-plane single-crystal-silicon thermal microactuators", SENSORS AND ACTUATORS A,CH,ELSEVIER SEQUOIA S.A., LAUSANNE, vol. 55, no. 1, 1996, pages 65-69, XP004031715, ISSN: 0924-4247
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