Title:
PROTECTIVE FILM AND BACK GRINDING METHOD FOR SEMICONDUCTOR WAFER
Document Type and Number:
WIPO Patent Application WO/2022/009940
Kind Code:
A1
Abstract:
The present invention provides: a protective film which is capable of suppressing the occurrence of an adsorption failure; and a back grinding method for a semiconductor wafer. This protective film 30 protects a surface 11, on which a circuit has been formed, of a semiconductor wafer 10 when a back surface 12 of the semiconductor wafer 10 is ground, while having the surface 11 adsorbed onto a fixture 41. The protective film 30 comprises an adhesive layer 33, a base material layer 31 and an auxiliary layer 32. The adhesive layer 33 is bonded to the semiconductor wafer 10, while the auxiliary layer 32 comes into contact with the fixture 41. The semiconductor wafer 10 has a level difference 13 in the outer peripheral edge of the surface 11 on which circuit has been formed.
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Inventors:
HAYASHISHITA EIJI (JP)
Application Number:
PCT/JP2021/025692
Publication Date:
January 13, 2022
Filing Date:
July 07, 2021
Export Citation:
Assignee:
MITSUI CHEMICALS TOHCELLO INC (JP)
International Classes:
B24B7/22; B24B41/06; C09J7/29; C09J7/38; C09J201/00; H01L21/304
Domestic Patent References:
| WO2020003920A1 | 2020-01-02 | |||
| WO2014192630A1 | 2014-12-04 |
Foreign References:
| JP2002069396A | 2002-03-08 | |||
| JP2019220633A | 2019-12-26 | |||
| JP2013077758A | 2013-04-25 | |||
| JP2017069489A | 2017-04-06 | |||
| JP2012043825A | 2012-03-01 |
Attorney, Agent or Firm:
SUZUKI Katsumasa (JP)
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