Title:
PROTECTIVE FILM FORMING METHOD FOR SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2017/175465
Kind Code:
A1
Abstract:
Provided is a protective film forming method for a semiconductor substrate, which method suppresses deterioration in the number of LPDs by suppressing adhesion of impurities such as particles from new formation of a protective film of an aqueous surfactant solution when the semiconductor substrate is peeled from a polishing head. The protective film forming method for a semiconductor substrate according to the present invention comprises: a first protective film forming process Y1 for forming a protective film by hydrophilizing the surface of the polished semiconductor substrate by an aqueous surfactant solution; and a second protective film forming process Y2 for forming protective films on the obverse surface and the reverse surface of the semiconductor substrate by peeling the semiconductor substrate from the polishing head and immersing the polished semiconductor substrate in a protective film forming treatment liquid in a state in which at least the surface of the polished semiconductor substrate is in contact with the liquid surface of the protective film forming treatment liquid comprising an aqueous surfactant solution after the first protective film forming process Y1.
Inventors:
SAKAI SHIN (JP)
KARIYAZAKI HIROAKI (JP)
AOKI TATSUHIKO (JP)
ARAKI KOJI (JP)
KARIYAZAKI HIROAKI (JP)
AOKI TATSUHIKO (JP)
ARAKI KOJI (JP)
Application Number:
PCT/JP2017/003924
Publication Date:
October 12, 2017
Filing Date:
February 03, 2017
Export Citation:
Assignee:
GLOBALWAFERS JAPAN CO LTD (JP)
International Classes:
H01L21/304
Foreign References:
| JP2003109931A | 2003-04-11 | |||
| JP2010021353A | 2010-01-28 | |||
| JP2007050465A | 2007-03-01 | |||
| JP2013045885A | 2013-03-04 | |||
| JPH08197418A | 1996-08-06 |
Other References:
See also references of EP 3442008A4
Attorney, Agent or Firm:
KINOSHITA Shigeru (JP)
Download PDF: