PULSE SIGNAL GENERATION DEVICE

WIPO Patent Application WO/2010/041752

A1

Provided is a microwave-, milliwave-band, high-frequency pulse signal generation device which makes it possible to achieve a simpler structure, improved performance, smaller integration, easier design, lower power consumption, and lower cost. A planar radiation oscillator substrate (S1) having an inner layer (GND12) interposed between a front dielectric substrate (10) and a back dielectric substrate (11) is provided with a pair of axially-symmetrical conductive patches (4, 4) in the radiating surface. A gate electrode (2) and a drain electrode (3) of a microwave transistor (1) are connected to each of the conductive patches (4, 4). A DC bias is supplied through an RF choke circuit (5a) to the gate electrode (2). A monopulse is supplied from a monopulse generation circuit (7) through an RF choke circuit (5b) to the drain electrode (3). An impedance line (9) which satisfies the oscillation conditions is connected to a source electrode (8). A high-frequency pulse signal, having an oscillation frequency and frequency bandwidth which are determined on the basis of the negative resistance generated by the short-time operation of the microwave transistor (1) and a resonant cavity structure, radiates into space simultaneous to being generated.

UTAGAWA HITOSHI (JP)
MATSUI TOSHIAKI (JP)

PCT/JP2009/067682

April 15, 2010

October 06, 2009

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NAT INST INF & COMM TECH (JP)
UTAGAWA HITOSHI (JP)
MATSUI TOSHIAKI (JP)

H01Q23/00; H01Q1/38; H01Q9/28; H03B7/06; H04B1/04

JP2000261234A	2000-09-22
JP2007124628A	2007-05-17

FUKUDA Kenzo et al. (JP)
Kenzo Fukuda (JP)

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