PULVERIZING, STIRRING, MIXING, AND KNEADING MACHINE MEMBERS

Title:

PULVERIZING, STIRRING, MIXING, AND KNEADING MACHINE MEMBERS

Document Type and Number:

WIPO Patent Application WO/2022/074904

Kind Code:

A1

Abstract:

The present invention provides pulverizing, stirring, mixing, and kneading machine members that each have a reduced weight, and excellent impact resistance and wear resistance, and further have magnetic properties, and that have a longer life. Specifically, the present invention provides pulverizing, stirring, mixing, and kneading machine members that each comprise a cermet which is obtained by blending raw materials such that the mass ratios of elements are 20-45% of Ti, 5-35% of Mo, 6-30% of W, 5-15% of C, and 10-50% of Co, the total of Co and Ni being more than 25% but not more than 50%, mixing the raw materials to obtain a mixed powder, compression molding the mixed powder to obtain a compressed body, and sintering the compressed body. This cermet has three phases which are a core phase 2 containing TiCN as a main component, a rim phase 3 that is present so as to cover the periphery of the core phase, and that contains (Ti, Mo, W) (C, N) as a main component, and a metal phase 4. The average particle size of a hard phase consisting of the core phase and the rim phase is less than 3 μm as observed in a cross-sectional structure, and a WC phase or a Mo2C phase cannot be observed by SEM observation.

More Like This:

WO/2012/086578	FE-PT FERROMAGNETIC SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
JP2909569	[Title of Invention] A method for manufacturing a wear-resistant high-strength aluminum alloy component.
JP3465567	SPUTTERING TARGET MATERIAL FOR FORMING TANTALUM SILICON NITRIDE THIN FILM

Inventors:

MASHIMA KATSUYA (JP)
KUROGI FUMIYA (JP)
UENO SHUJI (JP)
TANAKA TAKAAKI (JP)
MINAGAWA YASUNORI (JP)
WATANABE KEITA (JP)

Application Number:

PCT/JP2021/027829

Publication Date:

April 14, 2022

Filing Date:

July 28, 2021

Export Citation:

Click for automatic bibliography generation Help

Assignee:

NIPPON TUNGSTEN (JP)

International Classes:

C22C1/05; B22F1/00; B22F5/00; B22F7/00; C02F1/00; C22C29/00; C22C29/02; C22C29/10; C22C30/00; C22C32/00

Domestic Patent References:

WO2016084443A1

2016-06-02

Foreign References:

JPH06220605A	1994-08-09
JP2017031445A	2017-02-09

Attorney, Agent or Firm:

EIWA PATENT FIRM (JP)

Download PDF:

View/Download PDF PDF Help

Previous Patent: SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE, AND METHOD FOR MANUFACTURING SI...

Next Patent: WIRE HARNESS