Background Art Pyroelectric detectors produce small amounts of electric charge whenever their temperature is changed.

Often, these detectors are designed to undergo changes in temperature in response to incident electromagnetic radiation. Thus, an electric charge can be generated in response to any situation where electromagnetic radiation can change the temperature of the detector. The charge can be measured by electronic instrumentation which conveys a result in generally usable form.

Pyroelectric detectors are not typically used to measure steady temperatures (as with a thermometer). With pyroelectric detectors, such measurement would require precise accounting for very small amounts of electric charge, which is not practical with available technology.

Therefore, pyroelectric detectors are used to measure changes in temperature. A detector designed to respond to electromagnetic radiation thus produces electric charge in response to changes in radiation incident upon it.

A typical application of a pyroelectric detector is to detect human beings who emit infrared light (a form of electromagnetic radiation). Optical elements are designed to focus infrared light from a certain volume of space onto a pyroelectric detector. A human being moving into the volume of space will cause a change in the amount of electromagnetic radiation incident upon the detector, which in turn will produce a small amount of electric

charge in response. By adding electric instrumentation to such a combination of optics and detectors, a human motion sensor is created.

Charge from a pyroelectric detector may be measured in many different ways. One common method is to connect a load resistor (RL) in parallel with the pyroelectric sensor element 2 positioned in a package adjacent to a window 1 as shown in FIG. 1, and to measure the transient voltage produced by the charge flowing from the pyroelectric sensor element 2 in response to a change in temperature. Due to the physical characteristics of the detector, the magnitude of the resultant voltage varies with the rate of temperature change. This variation is often described by means of a frequency response graph as shown in FIG. 2, which shows peak voltage per watt of incident energy (causing temperature change) versus the frequency of application of the energy.

When used in the parallel load resistor (RL) configuration, pyroelectric detectors exhibit a peak response at a certain frequency. The load resistor is one element determining the location of the low frequency shoulder of the peak. Increasing the amount of load resistance moves the peak to a lower frequency. For many applications, a low frequency peak is desirable. However, the necessary load resistor may be in the hundreds of gigaohms. Resistances of this magnitude are difficult to fabricate. Moreover, instrumentation circuits utilizing such resistances are often problematic.

Another conventional pyroelectric detector is shown in FIG. 3 comprising an operational amplifier 8 used as a buffer for the pyroelectric sensor element 7 located in a package adjacent to a window 6. The operational amplifier adds a much smaller offset voltage than does the FET in FIG. 1 and it duplicates the pyroelectric sensor element 7 output voltage within a factor closer to unity (0.9995 to 1.0). However, these attributes are typically not

critical to pyroelectric detector applications, so an FET is the amplifier element most commonly used because it is less expensive.

U. S. Patent No. 5,352,895, issued October 4,1994 to Masao Inoue discloses a pyroelectric device comprising a pyroelectric member for detecting infrared radiation, and a field effect transistor (FET) connected to the pyroelectric member for amplifying the relatively small amount of electric charge produced in response to incident energy. Capacitors are connected to the source and drain of the FET for stabilizing an applied voltage and to cut high-frequency induced noise. A gate resistor is connected between the terminals of the pyroelectric member. The pyroelectric member is made of PVD or PZT materials and the gate resistor used for fire detection has a resistance ranging from 5 to 50 gigaohms and in particular claimed for 10 gigaohms. However, the FET amplifier does not provide for multiplying the resistance of the gate resistor 12 at non-zero frequencies.

U. S. Patent No. 5,262,647, issued November 16,1993 to Akira Kumada discloses an infrared detector with a pyroelectric detector element and an operational amplifier having a chopper control circuit that enables the detector to sense either a moving person or temperature. A chopper mechanism interrupts an infrared ray input to the pyroelectric infrared detector element. A gain control circuit is connected to the operational amplifier for controlling the amplifier gain. However, the operational amplifier does not provide for multiplying the resistance of the load resistor at non-zero frequencies.

Disclosure of the Invention Accordingly, it is therefore an object of this invention to provide a feedback buffer amplifier for receiving the output of a pyroelectric detector element at the junction of a load resistor (RL) for multiplying the

resistance of the load resistor (RL) at non-zero frequencies.

It is another object of the invention to enable the use of smaller resistances, which are easier to fabricate, in the pyroelectric detector by providing an effective load resistance as a result of feedback from a buffer amplifier output which multiplies the resistance of the load resistor.

It is a further object of the invention to more easily manage a quiescent (zero-frequency) output of the pyroelectric detector with smaller load resistors, in the presence of a buffer amplifier input bias current.

These and other objects are further accomplished by a pyroelectric detector comprising means for sensing infrared radiation, means connected in parallel with the sensing means for providing a load to measure the sensing means output, means coupled to the output of the sensing means for buffering the output, and a feedback means connected from an output to an input of the buffering means for producing multiplication of the resistance of the load. The sensing means comprises a pyroelectric ceramic material. The load means comprises a first resistor in series with a second resistor. The feedback means comprises a capacitor connected between the buffering means output and the load means. The buffering means comprises a field effect transistor. The buffering means comprises an operational amplifier. The buffering means comprises a gain of near unity. The multiplication of the load resistance improves a peak low frequency response of the sensing means. The buffering means comprises a source resistor for providing a buffered output of the sensing means output from the buffering means.

The objects are further accomplished by a pyroelectric detector comprising means for sensing infrared radiation, means connected in parallel with the

sensing means for providing a load to measure the sensing means output, the load comprising a first load resistor in series with a second resistor, means coupled to the output of the sensing means for buffering the sensing means output, the buffering means comprising an output divider which includes a first source resistor connected in series with a second source resistor, and the detector further comprising a feedback means connected from the junction of the first source resistor and the second source resistor to the junction of the first load resistor and the second resistor for producing multiplication of the load. The sensing means comprises a pyroelectric ceramic material.

The feedback means of the buffering means comprises a capacitor. The buffering means comprises a field effect transistor. The buffering means comprises a gain of near unity. The multiplication of the load resistor improves a peak low frequency response of the sensing means.

The objects are further accomplished by a method of providing a pyroelectric detector comprising the steps of sensing infrared radiation, connecting a load in parallel with means for sensing the infrared radiation, buffering the output of the sensing means with amplifier means, and providing a feedback means in the amplifier means connected from an output to an input of the amplifier means for producing multiplication of the resistance of the load. The step of sensing infrared radiation comprises the step of using a sensor having pyroelectric ceramic material. The step of connecting the load comprises the step of connecting a first resistor in series with a second resistor. The step of providing the feedback means comprises the step of connecting a capacitor between the amplifier means output and the load at the amplifier means input. The step of buffering the output of the sensing means comprises the step of using a field effect transistor. The step of buffering the output of the sensing means comprises the step of using an

operational amplifier. The step of providing feedback for producing multiplication of the resistance of the load improves a peak amplitude of a low frequency response of the sensing means.

Brief Description of the Drawincts The appended claims particularly point out and distinctly claim the subject matter of this invention.

The various objects, advantages and novel features of this invention will be more fully apparent from a reading of the following detailed description in conjunction with the accompanying drawings in which like reference numerals refer to like parts, and in which: FIG. 1 is a circuit diagram of a conventional pyroelectric infrared radiation detector having a field effect transistor (FET) as an amplifying element; FIG. 2 shows a graph of the voltage response in volts/watt from a pyroelectric detector element versus the frequency of electromagnetic radiation incident on the detector element; FIG. 3 is a circuit diagram of another conventional pyroelectric infrared radiation detector having an operational amplifier as an amplifying element; FIG. 4 is a circuit diagram of a pyroelectric infrared radiation detector according to the present invention; and FIG. 5 is a circuit diagram of an alternate embodiment of a pyroelectric infrared radiation detector according to the present invention.

Best Mode for Carrvina Out the Invention Referring to FIG. 1, a pyroelectric detector as known in the prior art is shown comprising a pyroelectric sensor element 2 located adjacent to a package window 1, a load resistor (RL) connected between the terminals of the pyroelectric sensor element 2, a field effect transistor

(FET) 3, a drain resistor RD connected between an FET 3 drain terminal and a voltage source (Vs), and a source resistor (RS) connected between an FET 3 source terminal and the return side of the voltage source (Vs). Infrared radiation passes through the window 1 and an optical filter (not shown) and is received in the pyroelectric <BR> <BR> <BR> element 2. The RS and RD resistors and the voltage source (Vs) are externally connected to the packaged pyroelectric element 2 with its RL and amplifier FET 3. A buffered signal output 5 is provided at the source (S) of FET 3.

With the addition of an offset voltage between the FET gate (G) and source (S), the voltage from the pyroelectric sensor element 2 is duplicated at the FET 3 source (S) within a gain factor between 0.95 and 1.0. Less commonly used is the amplified signal output 4 at the FET 3 drain (D).

Referring now to FIG. 4, a pyroelectric detector 10 circuit diagram of an embodiment of the present invention is shown. The circuit diagram of the pyroelectric detector 10 shows a package 11 having a window 12 with an external source resistor (RS) connected to a source terminal 19 and voltage source (Vs) connected to a drain terminal 13. The package 11 comprises a pyroelectric sensor element 14 positioned within the package 11 adjacent to window 12 with an optical filter (not shown) for preventing white light from affecting the sensor element 14, a resistor network having a load resistor (RL) in series with a resistor R connected between the terminals of the pyroelectric sensor element 14, and a field effect transistor 16 having a gate (G) connected to an output terminal of the pyroelectric sensor element 14 and RL at node 15. Further, there is a capacitor (C) connected between the source terminal 19 of FET 16 and the junction of series resistors RL and R. The junction of resistor R and the second terminal of the pyroelectric element are connected to terminal 17 of package 11. The

source resistor (RS) is connected externally between the FET 16 source terminal 19 and terminal 17. The positive terminal of voltage source (Vs) is connected to the drain terminal 13 of FET 16 and the return side of VS is connected to terminal 17 of package 11. A buffered signal output 18 voltage is measured at the source (S) of FET 16 across resistor RS.

Still referring to FIG. 4, feedback is introduced from the source output of buffer FET 16 to the gate input of buffer FET 16 via capacitor C and load resistor RL.

The effect of this feedback is to multiply the value of the load resistor RL by the following factor at typical measurement frequencies: <BR> <BR> <BR> <BR> 1<BR> <BR> 1- (buffer FET gain factor) At zero frequency the load resistance equals the non- multiplied value of RL+R. The resistance R may be selected to be much smaller than RL and determines along with capacitor C the time at which the feedback path becomes active. Thus, at zero frequency, where C is an open circuit, the load resistance R + RL approximately <BR> <BR> <BR> equals RL. Conversely, at frequencies substantially above<BR> <BR> <BR> 1/27TRC, where C can be regarded as a short circuit, the load resistance approximately equals: RL 1- (buffer FET gain factor) The product RC may be increased as desired to produce extended low frequency response of the pyroelectric sensor/buffer circuit, until thermal response of the detector sensor element 14 limits low frequency response.

The extension is accomplished without excessively high resistances for RUZ since RL is multiplied at frequencies substantially above 1/2xRC. At zero frequency, however, the buffer FET 16 sees a detector element load of essentially only RLI which eases the requirement for its input bias current, which could cause excessive offset voltage if flowing into a resistance many times greater than RL. For convenience, if a zero frequency load of 2RL is tolerable, R may be equal to RL. Because of the variation in buffer gain factor, especially in FET buffers, the gain factor can be reduced and made less dependent on the buffer circuit characteristics. This results in a smaller but more accurate RL multiplication.

Although the particular components of the pyroelectric detector circuit of FIG. 4 may vary depending on a particular application, the preferred embodiment comprises the following: The pyroelectric sensor element 14 may be embodied by a pyroelectric ceramic sensor as provided in Part No. LHi888 manufactured by EG&G Heimann Optoelectronics of Montgomeryville, Pennsylvania. The FET 16 may be embodied by a 2N4338 device which is available from many sources. The load resistor RL is 20 gigaohms, R is 2 gigaohms, C is 27 nanofarads and RS is 47 kiloohms.

The source voltage (Vs) is 0.5 volts.

Referring now to FIG. 5, an alternate embodiment of a pyroelectric detector 20 is shown according to the present invention providing a method of gain factor reduction.

Pyroelectric detector 20 comprises a package 21 having a window 22 with an optical filter (not shown) and an external source resistor (RS) connected to a source terminal 29 and a voltage source (Vs) connected to a drain terminal 23. The package 21 comprises a pyroelectric sensor element 24 positioned within the package 21 adjacent to window 22, a resistor network having a load resistor RL in series with resistor R, said network connected between terminals of pyroelectric sensor element

24, and a field effect transistor 26 with the gate (G) connected to the output terminal of the pyroelectric sensor element 24 and RL at node 25. Further, the capacitor (C) is connected between the junction of the series resistor network, RL and R, and terminal 29 at the junction of series resistors RS1 and RS which form an output divider with resistance values several orders of <BR> <BR> <BR> magnitude smaller than RL. The output divider of Rgi and<BR> <BR> <BR> RS provides for a smaller but more accurate load resistance multiplication. The positive terminal of voltage source Vs is connected to the drain 23 of FET 26 and the return side of Vs is connected to terminal 27 and <BR> <BR> RS. The buffered signal output 28 voltage is measured at<BR> <BR> <BR> terminal 29 at the divider junction of RS1 and RS.

Because of the variation in buffer gain factor, especially in FET buffers, the gain factor is reduced in the pyroelectric detector 20 of FIG. 5 which results in the smaller but more accurate RL multiplication. The net gain factor is equal to: (FET gain factor) (Rs) Rsl+Rs The pyroelectric detector 20 components shown in FIG. 5 may be embodied by the same components as the pyroelectric detector 10 in FIG. 4 except for the additional resistor RS1 which has a value of 4.7K ohms.

This invention has been disclosed in terms of certain embodiments. It will be apparent that many modifications can be made to the disclosed apparatus without departing from the invention. Therefore, it is the intent of the appended claims to cover all such variations and modifications as come within the true spirit and scope of this invention.