Title:
PZT THIN FILM LAMINATE AND METHOD FOR PRODUCING PZT THIN FILM LAMINATE
Document Type and Number:
WIPO Patent Application WO/2015/198882
Kind Code:
A1
Abstract:
The present invention provides a technique for suppressing the formation of a pyrochlore phase, which is an impurity phase, without using a conventional seed layer during the formation of a PZT thin film by sputtering. The present invention is a PZT thin film laminate which comprises: a Pt electrode layer (5) that is provided on an Si substrate (10) with a TiOx layer (4), which serves as a platinum adhesion layer, being interposed therebetween; a Ti thin film layer (6) that is formed on the Pt electrode layer (5); and a PZT thin film layer (7) that is formed on the Ti thin film layer (6). The thickness of the Ti thin film layer (6) can be set to a value from 1 nm to 10 nm (inclusive).
Inventors:
HIROSE MITSUTAKA (JP)
KOBAYASHI HIROKI (JP)
ITSUMI MITSUNORI (JP)
TSUKAGOSHI KAZUYA (JP)
TSUYUKI TATSURO (JP)
KIMURA ISAMU (JP)
SUU KOUKOU (JP)
KOBAYASHI HIROKI (JP)
ITSUMI MITSUNORI (JP)
TSUKAGOSHI KAZUYA (JP)
TSUYUKI TATSURO (JP)
KIMURA ISAMU (JP)
SUU KOUKOU (JP)
Application Number:
PCT/JP2015/066847
Publication Date:
December 30, 2015
Filing Date:
June 11, 2015
Export Citation:
Assignee:
ULVAC INC (JP)
International Classes:
H01L41/319; C23C14/08; C23C14/34; H01L41/047; H01L41/29; H01L41/316
Domestic Patent References:
| WO2012160972A1 | 2012-11-29 |
Foreign References:
| JP2003174211A | 2003-06-20 | |||
| JP2003086586A | 2003-03-20 | |||
| JP2005203761A | 2005-07-28 |
Other References:
See also references of EP 3163641A4
Attorney, Agent or Firm:
ABE, Hideki et al. (JP)
Hideki Abe (JP)
Hideki Abe (JP)
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