Title:
QUANTIZING LOOP MEMORY CELL SYSTEM
Document Type and Number:
WIPO Patent Application WO/2020/086140
Kind Code:
A3
Abstract:
One example includes a memory cell system that includes a quantizing loop that conducts a quantizing current in a first direction corresponding to a first stored memory state and to conduct the quantizing current in a second direction corresponding to a second stored memory state. The system also includes a bias element configured to provide a substantially constant flux bias of the quantizing loop in each of the first and second states of the stored memory state. The stored memory state can be read from the memory cell system in response to the substantially constant flux bias and a read current that is provided to the memory cell system. The system further includes a tunable energy element that is responsive to a write current that is provided to the memory cell system to change the state of the stored memory state between the first state and the second state.
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Inventors:
NAAMAN OFER (US)
MILLER DONALD L (US)
LUO HENRY YU TSING (US)
MILLER DONALD L (US)
LUO HENRY YU TSING (US)
Application Number:
PCT/US2019/046138
Publication Date:
August 27, 2020
Filing Date:
August 12, 2019
Export Citation:
Assignee:
NORTHROP GRUMMAN SYSTEMS CORP (US)
International Classes:
G11C11/44
Foreign References:
| US9520181B1 | 2016-12-13 |
Other References:
TAHARA S ET AL: "VORTEX TRANSITIONAL NON-DESTRUCTIVE READ-OUT JOSEPHSON MEMORY CELL", NEC RESEARCH AND DEVELOPMENT, NIPPON ELECTRIC LTD. TOKYO, JP, vol. 34, no. 4, 1 October 1993 (1993-10-01), pages 415 - 423, XP000424442, ISSN: 0547-051X
Attorney, Agent or Firm:
HARRIS, Christopher P. (US)
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