Title:
QUANTUM DOT LIGHT-EMITTING DIODE DEVICE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/258659
Kind Code:
A1
Abstract:
A quantum dot light-emitting diode device, comprising: a substrate (101); a first electrode (102) disposed on the substrate (101); a hole layer (103) vertically disposed on the first electrode (102) and having a side wall; an electron transport layer (104) disposed on the side wall; a quantum dot layer (105) disposed on the electron transport layer (104); and a second electrode (106) disposed on the electron transport layer (105). Zinc oxide nanowires have high density, and generates high photocurrent density, thus greatly improving luminance and enhancing the device performance.
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Inventors:
WU YUANCHUN (CN)
JIAO SHIBO (CN)
ZHANG SHUREN (CN)
CHEN JING (CN)
WANG LIXI (CN)
PAN JIANGYONG (CN)
TU YAN (CN)
JIAO SHIBO (CN)
ZHANG SHUREN (CN)
CHEN JING (CN)
WANG LIXI (CN)
PAN JIANGYONG (CN)
TU YAN (CN)
Application Number:
PCT/CN2019/117624
Publication Date:
December 30, 2020
Filing Date:
November 12, 2019
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L33/06; H01L33/14; H01L33/28
Foreign References:
| CN110311021A | 2019-10-08 | |||
| CN109390477A | 2019-02-26 | |||
| CN102266775A | 2011-12-07 | |||
| CN103325663A | 2013-09-25 | |||
| CN101924151A | 2010-12-22 | |||
| CN109037401A | 2018-12-18 | |||
| US20100252806A1 | 2010-10-07 | |||
| CN102473800A | 2012-05-23 |
Attorney, Agent or Firm:
PURPLEVINE INTELLECTUAL PROPERTY (SHENZHEN) CO., LTD. (CN)
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