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Title:
QUANTUM DOT, PREPARATION METHOD FOR QUANTUM DOT, AND PHOTOELECTRIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/184974
Kind Code:
A1
Abstract:
The present application discloses a quantum dot, a preparation method for the quantum dot, and a photoelectric device. The quantum dot comprises a core structure and a shell structure; the shell structure wraps the core structure; the material of the core structure is selected from one or two of CdSe and ZnCdSe; the shell structure is doped with molybdenum ions. The molybdenum ions can compensate for a vacancy defect of a core-shell structure to release surface stress caused based on the vacancy defect, and coordinate exposed anions of the core-shell structure to improve the light-emitting efficiency and stability of the quantum dot.

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Inventors:
GE JIANCHAO (CN)
Application Number:
PCT/CN2022/129162
Publication Date:
October 05, 2023
Filing Date:
November 02, 2022
Export Citation:
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Assignee:
TCL TECH GROUP CORP (CN)
International Classes:
C09K11/88; B82Y20/00; C09K11/56; H01L33/26
Foreign References:
CN108929670A2018-12-04
CN103694988A2014-04-02
US20170369779A12017-12-28
CN108767132A2018-11-06
US20180072947A12018-03-15
CN113597461A2021-11-02
Attorney, Agent or Firm:
PURPLEVINE INTELLECTUAL PROPERTY (SHENZHEN) CO., LTD. (CN)
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