Title:
QUANTUM DOT SOLID-STATE FILM AND METHOD FOR PREPARING SAME, AND QUANTUM DOT LIGHT-EMITTING DIODE
Document Type and Number:
WIPO Patent Application WO/2018/166428
Kind Code:
A1
Abstract:
Disclosed are a quantum dot solid-state film and a method for preparing same, and a quantum dot light-emitting diode. The method comprises the steps of: providing a quantum dot solution, and preparing a quantum dot material solid-state film on a substrate; immersing the quantum dot material solid-state film in a surface modifier solution to obtain a quantum dot material solid-state film modified by a surface modifier; providing a metal nano particle seed solution, and using a solution method to deposit the metal nano particle seed solution on the quantum dot material solid-state film modified by the surface modifier to obtain a quantum dot material solid-state film with the surface having adsorbed a layer of metal nano particle seed; and providing a metal nano wire precursor solution, and immersing the quantum dot material solid-state film having adsorbed a layer of metal nano particle seed in the metal nano wire precursor solution to perform metal nano wire growth, so as to obtain a quantum dot solid-state film. The quantum dot solid-state film obtained using the method of the present invention can effectively and rapidly transmit electrical charges, while also improving the overall performance of a device.
Inventors:
CHENG LULING (CN)
YANG YIXING (CN)
YANG YIXING (CN)
Application Number:
PCT/CN2018/078777
Publication Date:
September 20, 2018
Filing Date:
March 13, 2018
Export Citation:
Assignee:
TCL CORP (CN)
International Classes:
H01L51/56
Domestic Patent References:
| WO2009009612A9 | 2009-07-09 |
Foreign References:
| US20160027963A1 | 2016-01-28 | |||
| CN105140358A | 2015-12-09 | |||
| CN101405888A | 2009-04-08 | |||
| CN105140412A | 2015-12-09 |
Attorney, Agent or Firm:
JOHNSON INTELLECTUAL PROPERTY AGENCY (SHENZHEN) (CN)
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