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Title:
QUARTZ GLASS CRUCIBLE FOR PULLING UP OF SILICON SINGLE CRYSTAL AND PROCESS FOR PRODUCING THE QUARTZ GLASS CRUCIBLE
Document Type and Number:
WIPO Patent Application WO/2007/000864
Kind Code:
A1
Abstract:
Quartz glass crucible (5) for pulling up of a silicon single crystal having at least outer layer part (23) of a semi-transparent glass layer containing a vast plurality of bubbles and, provided on the inside surface of the outer layer part (23), inner layer part (24) of a transparent quartz glass layer containing no bubbles and having a smooth surface, characterized in that the outer layer part (23) is one containing, per cm3, 1.5 to 5.0×104 bubbles of 0.1 to 0.3 mm diameter. Thus, there is provided a quartz glass crucible for pulling up of silicon single crystal that through suppressing of any deformation of the quartz glass crucible during the pulling up of single crystal, prevents a yield drop attributable to occurrence of dislocations in the single crystal and attains an efficiency enhancement in the production of silicon single crystal, and that realizes an increase of mechanical strength. Further, there is provided a process for producing the same.

Inventors:
SAKURADA MASAHIRO (JP)
SONOKAWA SUSUMU (JP)
FUSEGAWA IZUMI (JP)
MATSUI HIROSHI (JP)
Application Number:
PCT/JP2006/310424
Publication Date:
January 04, 2007
Filing Date:
May 25, 2006
Export Citation:
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Assignee:
SHINETSU HANDOTAI KK (JP)
SHINETSU QUARTZ PROD (JP)
SAKURADA MASAHIRO (JP)
SONOKAWA SUSUMU (JP)
FUSEGAWA IZUMI (JP)
MATSUI HIROSHI (JP)
International Classes:
C30B29/06
Domestic Patent References:
WO2002014587A12002-02-21
Foreign References:
JPH01148783A1989-06-12
JPH0692779A1994-04-05
JPH05105577A1993-04-27
JPH04170387A1992-06-18
JP2002326889A2002-11-12
Other References:
See also references of EP 1905872A4
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (6-4 Motoasakusa 2-chome, Taito-k, Tokyo 41, JP)
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