Title:
QUARTZ THIN FILM RESONATOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/183379
Kind Code:
A1
Abstract:
Disclosed are a quartz thin film resonator and a manufacturing method therefor. The quartz thin film resonator may comprise a substrate, a bottom electrode, a quartz layer and a top electrode which are sequentially stacked, wherein the quartz layer comprises a quartz piezoelectric area positioned inside an effective area of the resonator and a quartz mechanical area positioned outside the effective area of the resonator, and the thickness of the quartz piezoelectric area is smaller than the thickness of the quartz mechanical area. The quartz thin film resonator of the present invention comprises both a thicker quartz mechanical area and a thinner quartz piezoelectric area, thereby being insensitive to external stress, mechanical shock and ambient vibrations, having a higher reliability and frequency stability, and realizing a target frequency. The quartz thin film resonator mainly uses a MEMS process flow and a large-size wafer-level packaging process, and therefore, large-scale and low-cost manufacturing can be realized, and the device manufactured has a high precision and a good consistency.
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Inventors:
ZHANG MENGLUN (CN)
PANG WEI (CN)
PANG WEI (CN)
Application Number:
PCT/CN2021/078732
Publication Date:
September 09, 2022
Filing Date:
March 02, 2021
Export Citation:
Assignee:
UNIV TIANJIN (CN)
International Classes:
H03H9/215; H03H3/02; H03H9/19
Foreign References:
| CN111010099A | 2020-04-14 | |||
| CN111262548A | 2020-06-09 | |||
| JP2015139167A | 2015-07-30 | |||
| CN111010123A | 2020-04-14 | |||
| CN110266285A | 2019-09-20 |
Attorney, Agent or Firm:
CHINA SMART INTELLECTUAL PROPERTY LTD. (CN)
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