Title:
RADIATION DETECTOR
Document Type and Number:
WIPO Patent Application WO/2018/016311
Kind Code:
A1
Abstract:
The present invention suppresses deviation in radiation detection performance between a plurality of adjacent semiconductor layers to which a bias voltage is applied and enhances detection accuracy. This radiation detector is provided with: a plurality of detection element modules configured through the two-dimensional arrangement of detection elements that have a semiconductor layer for generating charge through the reception of radiation photons, a common electrode that is formed on one surface of the semiconductor layer and is for applying a bias voltage to the semiconductor layer, and a pixel electrode that is formed on the other surface of the semiconductor layer; a plurality of lead lines for power supply that are arranged at a prescribed interval on the surfaces of the common electrodes of the detection elements included in the detection element modules; and scattered ray removing members that are disposed above the lead lines so as to correspond to the arrangement of the lead lines.
Inventors:
ONOUCHI MASAFUMI (JP)
Application Number:
PCT/JP2017/024451
Publication Date:
January 25, 2018
Filing Date:
July 04, 2017
Export Citation:
Assignee:
HITACHI LTD (JP)
International Classes:
G01T1/24; A61B6/03; G01T7/00; H01L27/14
Foreign References:
| JP2009534671A | 2009-09-24 | |||
| JP2009231715A | 2009-10-08 | |||
| JP2014238265A | 2014-12-18 | |||
| JP2009198343A | 2009-09-03 | |||
| JP2000164913A | 2000-06-16 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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