Title:
RADIATION-EMITTING SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SAME
Document Type and Number:
WIPO Patent Application WO2002073705
Kind Code:
A8
Abstract:
The invention relates to a radiation-emitting semiconductor component with an improved radiation yield and to a method for producing the same. The semiconductor element has a multilayer structure (2) with an active layer (3) for generating the radiation within the multilayer structure (2) and a window (1) with a first and a second primary surface. The multilayer structure adjoins the first primary surface (5) of the window (1). At least one recess is formed in the window (1), starting from the second primary surface (6), for increasing the radiation yield. The recess preferably has a trapezoidal cross-section, which tapers towards the first primary surface (5) and can be produced, for example, by sawing into the window.
Inventors:
BAUR JOHANNES (DE)
EISERT DOMINIK (DE)
FEHRER MICHAEL (DE)
HAHN BERTHOLD (DE)
HAERLE VOLKER (DE)
ORTMANN MARIANNE (DE)
STRAUSS UWE (DE)
VOELKL JOHANNES (DE)
ZEHNDER ULRICH (DE)
EISERT DOMINIK (DE)
FEHRER MICHAEL (DE)
HAHN BERTHOLD (DE)
HAERLE VOLKER (DE)
ORTMANN MARIANNE (DE)
STRAUSS UWE (DE)
VOELKL JOHANNES (DE)
ZEHNDER ULRICH (DE)
Application Number:
PCT/DE2002/000514
Publication Date:
November 13, 2003
Filing Date:
February 13, 2002
Export Citation:
Assignee:
OSRAM OPTO SEMICONDUCTORS GMBH (DE)
BAUR JOHANNES (DE)
EISERT DOMINIK (DE)
FEHRER MICHAEL (DE)
HAHN BERTHOLD (DE)
HAERLE VOLKER (DE)
ORTMANN MARIANNE (DE)
STRAUSS UWE (DE)
VOELKL JOHANNES (DE)
ZEHNDER ULRICH (DE)
BAUR JOHANNES (DE)
EISERT DOMINIK (DE)
FEHRER MICHAEL (DE)
HAHN BERTHOLD (DE)
HAERLE VOLKER (DE)
ORTMANN MARIANNE (DE)
STRAUSS UWE (DE)
VOELKL JOHANNES (DE)
ZEHNDER ULRICH (DE)
International Classes:
H01L33/00; H01L33/20; H01L33/02; (IPC1-7): H01L33/00
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