Title:
RADIATION SENSITIVE COMPOSITION AND RESIST PATTERN FORMING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/031250
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a radiation sensitive composition which has excellent sensitivity and resolution; and a resist pattern forming method. The present invention is a radiation sensitive composition which contains a polymetalloxane that has a structural unit represented by formula (1), a radiation sensitive acid generator, and a solvent. In formula (1), M represents a germanium atom, a tin atom or a lead atom; Ar1 represents a substituted or unsubstituted aryl group having 6-20 ring members or a substituted or unsubstituted heteroaryl group having 5-20 ring members; R1 represents a monovalent organic group having 1-20 carbon atoms, a hydrogen atom, a halogen atom or a hydroxy group; and n represents 2 or 3.
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Inventors:
NAKAGAWA HISASHI (JP)
ASANO YUSUKE (JP)
MINEGISHI SHINYA (JP)
ASANO YUSUKE (JP)
MINEGISHI SHINYA (JP)
Application Number:
PCT/JP2018/027972
Publication Date:
February 14, 2019
Filing Date:
July 25, 2018
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
G03F7/038; G03F7/004; G03F7/20
Domestic Patent References:
WO2016140057A1 | 2016-09-09 |
Foreign References:
US4761464A | 1988-08-02 | |||
JPS63253939A | 1988-10-20 | |||
JP2003215792A | 2003-07-30 | |||
JPH11125907A | 1999-05-11 | |||
JPH08146610A | 1996-06-07 | |||
JP2000298347A | 2000-10-24 |
Other References:
YANG, YUN ET AL.: "Direct patterning of polysilanes and polygermanes using interference lithography", APPLIED ORGANOMETALLIC CHEMISTRY, vol. 25, 10 August 2011 (2011-08-10), pages 665 - 668, XP055575827
See also references of EP 3667419A4
See also references of EP 3667419A4
Attorney, Agent or Firm:
AMANO Kazunori (JP)
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