RADIATION-TOLERANT THREE-DIMENSIONAL UNIT MOSFET HARDENED AGAINST SINGLE EVENT EFFECT AND TOTAL IONIZING DOSE EFFECT

Title:

RADIATION-TOLERANT THREE-DIMENSIONAL UNIT MOSFET HARDENED AGAINST SINGLE EVENT EFFECT AND TOTAL IONIZING DOSE EFFECT

Document Type and Number:

WIPO Patent Application WO/2019/194380

Kind Code:

A1

Abstract:

The present invention relates to a radiation-tolerant three-dimensional unit MOSFET, and proposes a radiation-tolerant three-dimensional unit MOSFET to which at least one of a dummy drain (DD), an n-well (NW) layer, a deep n-well (DNW) layer, and a p+ layer is selectively added to minimize a total event effect and a single event effect.

More Like This:

JP4258034	Semiconductor devices and methods for manufacturing semiconductor devices
JP3776318	Ferroelectric transistor and its manufacturing method
JP7435087	Electro-optical devices and electronic equipment

Inventors:

LEE HEE CHUL (KR)
ROH YOUNG TAK (KR)

Application Number:

PCT/KR2018/012031

Publication Date:

October 10, 2019

Filing Date:

October 12, 2018

Export Citation:

Click for automatic bibliography generation Help

Assignee:

KOREA ADVANCED INST SCI & TECH (KR)

International Classes:

H01L29/78; H01L21/8234

Foreign References:

US20160027911A1	2016-01-28
KR20150002029A	2015-01-07
US8497171B1	2013-07-30
KR20140050700A	2014-04-29

Other References:

CHAO ZHANG: "Research on single-event transient mechanism in a novel SOI CMOS technology", IEICE ELECTRONICS EXPRESS, 3 September 2014 (2014-09-03), pages 1 - 10, XP055645644

Attorney, Agent or Firm:

KIM, Jeong Hoon (KR)

Download PDF:

View/Download PDF PDF Help

Previous Patent: PROTECTIVE CASE FOR WITHDRAWING WET TISSUE

Next Patent: QUINOPHTHALONE-BASED COMPOUND, PHOTOSENSITIVE RESIN COMPOSITION COMPRISING SAME, PHOTOSENSITIVE MATE...