Title:
RADICALS OF GROUP 14 ELEMENTS OF THE THIRD PERIOD AND BELOW AND PROCESS FOR PRODUCTION THEREOF
Document Type and Number:
WIPO Patent Application WO/2004/002993
Kind Code:
A1
Abstract:
A process for production of radicals of Group 14 elements of the third period and below as represented by the general formula (1): (1) [wherein E is a Group 14 element of the third period or below; R1 to R9 are each alkyl or aryl and may be the same or different from each other; x, y, and z are each an integer of 0 to 3 and satisfy the relationship: x + y + z = 3; and · is an unpaired electron], which comprises the step of reacting a compound bearing a group 14 element of the third period or below to which two halogen atoms and two silyl groups are bonded with a silyl salt and then with an oxidizing agent of one electron accepting type.
Inventors:
SEKIGUCHI AKIRA (JP)
Application Number:
PCT/JP2003/006990
Publication Date:
January 08, 2004
Filing Date:
June 03, 2003
Export Citation:
Assignee:
INST TSUKUBA LIAISON CO LTD (JP)
SEKIGUCHI AKIRA (JP)
SEKIGUCHI AKIRA (JP)
International Classes:
C09K11/06; C07F7/08; C07F7/22; C07F7/30; (IPC1-7): C07F7/08; C07F7/22; C07F7/30
Other References:
KIRA M. ET AL.: "Persistent tris(tau-butyldimethylsilyl)silyl radical and its new generation methods", CHEMISTRY LETTERS, no. 11, 1998, pages 1097 - 1098, XP002970470
KYUSHIN S. ET AL.: "Highly planar silane ((i-Pr)3Si)3SiH and silyl radical ((i-Pr)3Si)3Si", CHEMISTRY LETTERS, no. 2, 1998, pages 107 - 108, XP002970471
KYUSHIN S. ET AL.: "Highly planar silane ((i-Pr)3Si)3SiH and silyl radical ((i-Pr)3Si)3Si", CHEMISTRY LETTERS, no. 2, 1998, pages 107 - 108, XP002970471
Attorney, Agent or Firm:
Takaishi, Kitsuma (Shinjuku-ku, Tokyo, JP)
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