RANGE SENSOR AND RANGE IMAGE SENSOR - HAMAMATSU PHOTONICS KK

Title:

RANGE SENSOR AND RANGE IMAGE SENSOR

Document Type and Number:

WIPO Patent Application WO/2011/065279

Kind Code:

A1

Abstract:

Disclosed is a range image sensor (1), which comprises: a semiconductor substrate (1A) that has a light incident surface (1BK) and a surface (1FT) which is on the reverse side of the light incident surface (1BK); a photogate electrode (PG); first and second gate electrodes (TX1, TX2); first and second semiconductor regions (FD1, FD2); and a third semiconductor region (SR1). The photogate electrode (PG) is formed on the surface (1FT). The first and second gate electrodes (TX1, TX2) are arranged adjacent to the photogate electrode (PG). The first and second semiconductor regions (FD1, FD2) store the electric charge that flows into the regions directly below the gate electrodes (TX1, TX2). The third semiconductor region (SR1) is arranged apart from the first and second semiconductor regions (FD1, FD2) toward the light incident surface (1BK) side, and has a conductivity type that is opposite to the conductivity type of the first and second semiconductor regions (FD1, FD2).

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Inventors:

MASE MITSUHITO (JP)
SUZUKI TAKASHI (JP)
YAMAZAKI TOMOHIRO (JP)

Application Number:

PCT/JP2010/070564

Publication Date:

June 03, 2011

Filing Date:

November 18, 2010

Export Citation:

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Assignee:

HAMAMATSU PHOTONICS KK (JP)
MASE MITSUHITO (JP)
SUZUKI TAKASHI (JP)
YAMAZAKI TOMOHIRO (JP)

International Classes:

G01S7/48; G01S7/4863; G01S17/89; H01L27/146

Domestic Patent References:

WO2009139312A1

2009-11-19

Foreign References:

JP2009014461A	2009-01-22
JP2005268814A	2005-09-29

Other References: