RANGE SENSOR AND RANGE IMAGE SENSOR

WIPO Patent Application WO/2011/065280

A1

Disclosed is a range image sensor (RS), which comprises an imaging region that is composed of a plurality of two-dimensionally arranged units and provided on a semiconductor substrate (1), and which obtains a range image based on the charge amounts outputted from the units. Each unit comprises: a photosensitive region; a plurality of third semiconductor regions (9a, 9b) which face each other with a photogate electrode (PG) interposed therebetween in the facing direction of first and second long sides (L1, L2); first and second transfer electrodes (TX1, TX2) which are respectively provided between the plurality of third semiconductor regions (9a, 9b) and the photogate electrode (PG); a plurality of fourth semiconductor regions (11a, 11b) which are arranged so as to sandwich the third semiconductor regions (9a, 9b) in the facing direction of the first and second long sides (L1, L2); and a plurality of third transfer electrodes (TX3) which are respectively provided between the plurality of fourth semiconductor regions (11a, 11b) and the photogate electrode (PG).

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SUZUKI TAKASHI (JP)
MASE MITSUHITO (JP)

PCT/JP2010/070578

June 03, 2011

November 18, 2010

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HAMAMATSU PHOTONICS KK (JP)
SUZUKI TAKASHI (JP)
MASE MITSUHITO (JP)

G01S7/4863; G01S17/894; H01L27/146

WO2007119626A1	2007-10-25
WO2010013811A1	2010-02-04

JP2004294420A	2004-10-21
JP2008008700A	2008-01-17
JP2007150008A	2007-06-14

See also references of EP 2506036A4

HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)

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