Title:
RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION, AND LIGHT-BLOCKING CONTAINER HAVING RAW MATERIAL CHEMICAL VAPOR DEPOSITION CONTAINED THEREIN AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2018/225668
Kind Code:
A1
Abstract:
A raw material for chemical vapor deposition (CVD), which is a raw material for producing an indium oxide thin film by chemical vapor deposition, can be stored for a long period, and is easy to handle upon use when chemical vapor deposition is carried out; and a method for storing the raw material. A raw material for chemical vapor deposition, characterized by containing an alkylcyclopentadienylindium (I) (C5H4R1-In) as a main component, also containing at least one component selected from an alkylcyclopentadiene (C5H5R2), a dialkylcyclopentadiene ((C5H5R3)2), a trisalkylcyclopentadienylindium (III) ((C5H4R4)3-In) and triscyclopentadienyl indium (III) as a sub-component (wherein R1 to R4 independently represent an alkyl group having 1 to 4 carbon atoms), and containing substantially no solvent.
Inventors:
MIZUTANI FUMIKAZU (JP)
HIGASHI SHINTARO (JP)
HIGASHI SHINTARO (JP)
Application Number:
PCT/JP2018/021318
Publication Date:
December 13, 2018
Filing Date:
June 04, 2018
Export Citation:
Assignee:
KOJUNDO CHEMICAL LABORATORY CO LTD (JP)
International Classes:
C23C16/40; C07F5/00; C07F17/00; H01B13/00
Foreign References:
| JPH0388324A | 1991-04-12 | |||
| JPH02163930A | 1990-06-25 | |||
| JPH03190123A | 1991-08-20 | |||
| JPH0194613A | 1989-04-13 |
Attorney, Agent or Firm:
KINOSHITA Shigeru (JP)
Download PDF: