Title:
RAW MATERIAL FOR FORMATION OF THIN FILM FOR USE IN ATOMIC LAYER DEPOSITION, AND METHOD FOR PRODUCING THIN FILM
Document Type and Number:
WIPO Patent Application WO/2022/059571
Kind Code:
A1
Abstract:
A raw material for formation of a thin film for use in atomic layer deposition, the raw material containing a yttrium compound represented by general formula (1). (In the formula, R1 represents a C3-8 secondary alkyl group, R2 represents C4-8 tertiary alkyl group, and R3 represents a hydrogen atom or a C1-5 primary, secondary, or tertiary alkyl group.)
Inventors:
HATASE MASAKO (JP)
MITSUI CHIAKI (JP)
MITSUI CHIAKI (JP)
Application Number:
PCT/JP2021/032956
Publication Date:
March 24, 2022
Filing Date:
September 08, 2021
Export Citation:
Assignee:
ADEKA CORP (JP)
International Classes:
C23C16/40; C07C49/92; C07F5/00; H01L21/31; H01L21/316
Domestic Patent References:
| WO2019051302A1 | 2019-03-14 |
Foreign References:
| US5837321A | 1998-11-17 | |||
| US20110165328A1 | 2011-07-07 |
Attorney, Agent or Firm:
SOGA, Michiharu et al. (JP)
Download PDF: