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Patent Searching and Data


Title:
REACTIVE SPUTTERING METHOD AND DEVICE
Document Type and Number:
WIPO Patent Application WO/2003/100113
Kind Code:
A1
Abstract:
A method for forming a film on a substrate (3) placed in a vacuum chamber (1) by reactive sputtering by using a reactive sputtering device comprising a sputter evaporation source (2) provided in the vacuum chamber (1) and having a metal target, a sputter power supply (4) for driving the sputter evaporation source (2), and an introduction mechanism (5) for introducing an inert gas for sputtering and a reactive gas forming a compound with the sputtered metal into the vacuum chamber (1), wherein constant voltage control to keep the voltage of the sputter power supply (4) at a target voltage Vs is carried out, and the target voltage control to control the target voltage Vs is carried out at a control speed lower than that of the constant voltage control so that the spectrum of plasma emission produced in front of the sputter evaporation source (2) may be a target one.

Inventors:
IKARI YOSHIMITSU (JP)
TAMAGAKI HIROSHI (JP)
KOHARA TOSHIMITSU (JP)
Application Number:
PCT/JP2003/006583
Publication Date:
December 04, 2003
Filing Date:
May 26, 2003
Export Citation:
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Assignee:
KOBE STEEL LTD (JP)
IKARI YOSHIMITSU (JP)
TAMAGAKI HIROSHI (JP)
KOHARA TOSHIMITSU (JP)
International Classes:
C23C14/00; C23C14/34; C23C14/08; C23C14/32; C23C14/54; F02B67/06; F16H7/08; H01J37/32; H01J37/34; (IPC1-7): C23C14/34
Foreign References:
JP2002180247A2002-06-26
EP0508359A11992-10-14
EP0416241A21991-03-13
EP0430229A21991-06-05
Other References:
SPROUL W.D. ET AL.: "Multi-level control for reactive sputtering", SOCIETY OF VACUUM COATERS; 45TH ANNUAL TECHNICAL CONFERENCE PROCEEDINGS, 13 April 2002 (2002-04-13) - 18 April 2002 (2002-04-18), pages 11 - 15, XP002972312
See also references of EP 1553206A4
Attorney, Agent or Firm:
Yasuda, Toshio (7 & 6th Floor Shori Building, 7-19, Takaida-hondori 7-chom, Higashi-Osaka-shi Osaka, JP)
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