Title:
READ OPERATION CIRCUIT, CHIP, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/261890
Kind Code:
A1
Abstract:
A read operation circuit, comprising a voltage follower and a sense amplifier. The voltage follower and the sense amplifier are respectively coupled to a cross-point memory array; the cross-point memory array comprises multiple columns of memory cells and a plurality of bit lines in one-to-one correspondence to the multiple columns of memory cells; one end of each of the memory cells in each of the multiple columns is connected to a bit line corresponding to each column of memory cells; the voltage follower is used for copying the voltage on a target bit line connected to a selected memory cell to other bit lines among the plurality of bit lines than the target bit line; and the sense amplifiers are used for performing a read operation on the selected memory cell. When a read operation is performed on the selected memory cell in the cross-point memory array, the effect of other memory cells can be effectively eliminated.
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Inventors:
WENG ZHENHUA (CN)
YE LI (CN)
LI WENJING (CN)
XIANG QINGYI (CN)
YE LI (CN)
LI WENJING (CN)
XIANG QINGYI (CN)
Application Number:
PCT/CN2021/100564
Publication Date:
December 22, 2022
Filing Date:
June 17, 2021
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G11C7/02
Foreign References:
| CN1417802A | 2003-05-14 | |||
| CN102280128A | 2011-12-14 | |||
| CN106601290A | 2017-04-26 | |||
| CN104992723A | 2015-10-21 |
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