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Patent Searching and Data


Title:
REAR-SURFACE-INCIDENT SOLID STATE IMAGING ELEMENT AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2017/122545
Kind Code:
A1
Abstract:
A rear-surface-incident type solid state imaging element has a first charge transfer electrode group (vertical shift register) inside an imaging area, and a second charge transfer electrode group (horizontal shift register) inside the peripheral area of the imaging area. The light-incidence surface of a semiconductor substrate 4 corresponding to the peripheral area is etched, and the etched area is filled with an inorganic shielding substance SH. The inorganic shielding substance is evaporated in vacuo with an extremely low gasified amount, and the vaporized gas has minimal effect on imaging.

Inventors:
OTSUKA SHINYA (JP)
SUZUKI HISANORI (JP)
MURAMATSU MASAHARU (JP)
Application Number:
PCT/JP2016/089085
Publication Date:
July 20, 2017
Filing Date:
December 28, 2016
Export Citation:
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Assignee:
HAMAMATSU PHOTONICS KK (JP)
International Classes:
H01L27/14; H01L27/144; H04N5/369
Foreign References:
JP2004031452A2004-01-29
JP2000138365A2000-05-16
JP2015520939A2015-07-23
JP2009117454A2009-05-28
JP2010080687A2010-04-08
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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