Title:
RECESS EMBEDDING METHOD AND SUBSTRATE TREATMENT APPARATUS
Document Type and Number:
WIPO Patent Application WO/2022/065315
Kind Code:
A1
Abstract:
This recess embedding method comprises: a combination step including a film forming step for forming a film in recesses formed on the surface of a substrate and having different aspect ratios and an etching step for etching the film formed in the recesses; and a repetition step for repeating the combination step n times (n is a natural number of 2 or more). The repetition step includes: a first combination step for performing the etching step with a first etching amount suitable for embedding, with the film, a first recess having a first aspect ratio; and a second combination step for performing the etching step with a second etching amount that is smaller than the first etching amount and is suitable for embedding, with the film, a second recess having a second aspect ratio smaller than the first aspect ratio.
Inventors:
KAGAYA MUNEHITO (JP)
SUZUKI YUSUKE (JP)
SUZUKI YUSUKE (JP)
Application Number:
PCT/JP2021/034622
Publication Date:
March 31, 2022
Filing Date:
September 21, 2021
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H01L21/31; H01L21/318
Foreign References:
| JP2015018879A | 2015-01-29 | |||
| JP2016051884A | 2016-04-11 | |||
| JP2003031649A | 2003-01-31 | |||
| JP2008141124A | 2008-06-19 | |||
| JPH06291178A | 1994-10-18 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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