Title:
RECOMBINATION LIFETIME CONTROL METHOD
Document Type and Number:
WIPO Patent Application WO/2019/039273
Kind Code:
A1
Abstract:
The present invention provides a control method for controlling the recombination lifetime of a carrier in a silicon substrate by performing: a preparation step of preparing a silicon substrate in which the recombination lifetime of a carrier is to be controlled; a particle beam irradiation step; and a thermal processing step. The recombination lifetime control method is characterized in that, before the preparation step is performed, a correlation between a measured recombination lifetime and a nitrogen concentration is acquired in advance, and, on the basis of the correlation, the nitrogen concentration is adjusted in the preparation step so that the recombination lifetime after the thermal processing step for the silicon substrate becomes a target value. In this way, a recombination lifetime control method is provided with which, in a step of manufacturing a power device in which the recombination lifetime of a carrier is controlled, it is possible to decrease variations in recombination lifetime and to control recombination lifetime with high accuracy.
Inventors:
TAKENO HIROSHI (JP)
Application Number:
PCT/JP2018/029697
Publication Date:
February 28, 2019
Filing Date:
August 08, 2018
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
C30B13/10; H01L21/66; C30B29/06; H01L21/322
Domestic Patent References:
| WO2013100155A1 | 2013-07-04 | |||
| WO2007055352A1 | 2007-05-18 | |||
| WO2013100155A1 | 2013-07-04 | |||
| WO2007055352A1 | 2007-05-18 |
Foreign References:
| JP2015198166A | 2015-11-09 | |||
| JP2009249262A | 2009-10-29 | |||
| JP2002110687A | 2002-04-12 | |||
| JP2013005509A | 2013-01-07 | |||
| JP2000200792A | 2000-07-18 |
Other References:
KIYOI ET AL.: "The 61st Japan Society of Applied Physics Spring Meeting", MEETING PROCEEDINGS
MINATO ET AL., THE 4TH WORKSHOP ON POWER DEVICE SILICON AND RELATED SEMICONDUCTOR MATERIALS, pages 77
K. TAKANO ET AL., PROCEEDING OF THE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S, 2015, pages 129
SUGIYAMA ET AL., SILICON TECHNOLOGY NO. 87, pages 6
SUGIE ET AL., SILICON TECHNOLOGY NO. 148, pages 11
N. INOUE ET AL., PHYSICA B, vol. 401-402, 2007, pages 477
MINATO ET AL., THE 4TH WORKSHOP ON POWER DEVICE SILICON AND RELATED SEMICONDUCTOR MATERIALS, pages 77
K. TAKANO ET AL., PROCEEDING OF THE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S, 2015, pages 129
SUGIYAMA ET AL., SILICON TECHNOLOGY NO. 87, pages 6
SUGIE ET AL., SILICON TECHNOLOGY NO. 148, pages 11
N. INOUE ET AL., PHYSICA B, vol. 401-402, 2007, pages 477
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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