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Title:
RECTIFIER DIODE REPLACEMENT CIRCUIT AND REVERSE BIAS CUT-OFF DRIVE CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2018/036041
Kind Code:
A1
Abstract:
A rectifier diode replacement circuit having reverse bias cut-off drive, comprising a rectifier diode circuit and a reverse bias cut-off drive circuit (6). The reverse bias cut-off drive circuit detects voltages at both ends (A, K) of the rectifier diode circuit. When a cathode potential is greater than an anode potential, the reverse bias cut-off drive circuit forms a rapid charge discharge channel at a gate of a power MOS transistor (Q) to cut off the power MOS transistor, or the reverse bias cut-off drive circuit forms a rapid charge discharge channel at both ends of an energy storage capacitor (C) so that the energy storage capacitor discharges by means of the reverse bias cut-off drive circuit, and when the voltages at both ends of the energy storage capacitor are lower than an output voltage of a bandgap reference circuit (3) in the rectifier diode circuit, a hysteresis comparator (4) outputs an off signal to be amplified by a drive amplifier (5) to cut off the power MOS transistor. According to the reverse bias cut-off drive circuit, the rectifier diode circuit can be converted from a forward bias to a reverse bias, and then is rapidly cut off.

Inventors:
ZHANG ZHENRONG (CN)
FAN LIN (CN)
WANG LU (CN)
LIU YONGGUANG (CN)
YU JINCHUAN (CN)
HE XUDONG (CN)
WAN TIANCAI (CN)
XU HUA (CN)
Application Number:
PCT/CN2016/111191
Publication Date:
March 01, 2018
Filing Date:
December 21, 2016
Export Citation:
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Assignee:
CHONGQING SOUTHWEST INTEGRATED CIRCUIT DESIGN CO LTD (CN)
International Classes:
H02M7/217; H02M1/08; H03K17/04
Foreign References:
CN102904421A2013-01-30
CN200976577Y2007-11-14
CN104953859A2015-09-30
JP2005198375A2005-07-21
JPH08317656A1996-11-29
Other References:
See also references of EP 3416277A4
None
Attorney, Agent or Firm:
CHONGQING FRONTIER PATENT ATTORNEY OFFICE(GENERAL PARTNER) (CN)
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