Title:
RECTIFIER ELEMENT, AND SWITCHING ELEMENT HAVING SAID RECTIFIER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2018/025691
Kind Code:
A1
Abstract:
Provided is a rectifier element for preventing incorrect writing and incorrect operation, and for replacing a select transistor. A semiconductor device on which the rectifier element is mounted, which has excellent reliability, and which is re-writable using a non-volatile switch having low surface area and low power consumption, is characterized by being provided with a multilayer structure comprising a first electrode 11, a first buffer layer 14, a rectification layer 13, a second buffer layer 15, and a second electrode 12, the rectification layer 13 being constituted by a first silicon nitride layer 16 having a high nitrogen content (50 at% or more), and second silicon nitride layers 17 having a lower nitrogen content than the first silicon nitride layer 16 (50 at% or less), the second silicon nitride layers 17 being in contact with the first and second buffer layers (14, 15), and the first silicon nitride layer 16 being sandwiched between the second silicon nitride layers 17.
Inventors:
BANNO NAOKI (JP)
TADA MUNEHIRO (JP)
IGUCHI NORIYUKI (JP)
TADA MUNEHIRO (JP)
IGUCHI NORIYUKI (JP)
Application Number:
PCT/JP2017/026709
Publication Date:
February 08, 2018
Filing Date:
July 24, 2017
Export Citation:
Assignee:
NEC CORP (JP)
International Classes:
H01L21/329; H01L21/8239; H01L27/105; H01L29/88; H01L45/00; H01L49/00; H01L49/02
Domestic Patent References:
| WO2013190988A1 | 2013-12-27 |
Foreign References:
| JP2015076609A | 2015-04-20 | |||
| JPH04229635A | 1992-08-19 |
Other References:
BANNO N. ET AL.: "A Novel Two-Varistors (a- Si/SiN/a-Si) selected Complementary Atom Switch (2V-1CAS) for Nonvolatile Crossbar Switch with Multiple Fan-outs", 2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM, 7 December 2015 (2015-12-07), pages 2.5.1 - 2.5.4, XP032865472, ISBN: 978-1-4673-9893-0
Attorney, Agent or Firm:
MIYAZAKI Teruo et al. (JP)
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