REDUCING PLASMA IGNITION PRESSURE

Title:

REDUCING PLASMA IGNITION PRESSURE

Document Type and Number:

WIPO Patent Application WO2006012003

Kind Code:

A3

Abstract:

A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.

Inventors:

WIEPKING MARK (US)
LYNDAKER BRADFORD J (US)
KUTHI ANDRAS (US)
FISCHER ANDREAS (US)

Application Number:

PCT/US2005/021098

Publication Date:

July 06, 2006

Filing Date:

June 14, 2005

Export Citation:

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Assignee:

LAM RES CORP (US)
WIEPKING MARK (US)
LYNDAKER BRADFORD J (US)
KUTHI ANDRAS (US)
FISCHER ANDREAS (US)

International Classes:

B23K9/02; B23K9/00

Foreign References:

US20040025791A1	2004-02-12
US6057244A	2000-05-02
US6562190B1	2003-05-13

Other References: