Title:
REDUCTION OF COPPER OR TRACE METAL CONTAMINANTS IN PLASMA ELECTROLYTIC OXIDATION COATINGS
Document Type and Number:
WIPO Patent Application WO/2011/153228
Kind Code:
A3
Abstract:
A method for creating an oxide layer having a reduced copper concentration over a surface of an object comprising aluminum and copper for use in a semiconductor processing system. The oxide layer produced using a plasma electrolytic oxidation process has a reduced copper peak concentration, which decreases a risk of copper contamination, and includes magnesium oxides that can be converted to magnesium halide upon exposure to an excited halogen- comprising gas or halogen-comprising plasma to increase the erosion/corrosion resistance of the oxide layer.
Inventors:
CHEN XING (US)
JI CHENGXIANG (US)
TAI CHIU-YING (US)
JI CHENGXIANG (US)
TAI CHIU-YING (US)
Application Number:
PCT/US2011/038746
Publication Date:
September 27, 2012
Filing Date:
June 01, 2011
Export Citation:
Assignee:
MKS INSTR INC (US)
CHEN XING (US)
JI CHENGXIANG (US)
TAI CHIU-YING (US)
CHEN XING (US)
JI CHENGXIANG (US)
TAI CHIU-YING (US)
International Classes:
C25D5/48; C23C16/44; C25D11/04; H01J37/16; H01J37/32
Domestic Patent References:
WO2005014892A2 | 2005-02-17 | |||
WO2007092611A2 | 2007-08-16 |
Foreign References:
US6197178B1 | 2001-03-06 | |||
US20040050490A1 | 2004-03-18 | |||
US6066392A | 2000-05-23 | |||
US20100028572A1 | 2010-02-04 |
Attorney, Agent or Firm:
BARNES, Rebecca, N. (LLPOne International Plac, Boston MA, US)
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