REDUCTION OF NOISE, AND OPTIMIZATION OF MAGNETIC FIELD SENSITIVITY AND ELECTRICAL PROPERTIES IN MAGNETIC TUNNEL JUNCTION DEVICES

Title:

REDUCTION OF NOISE, AND OPTIMIZATION OF MAGNETIC FIELD SENSITIVITY AND ELECTRICAL PROPERTIES IN MAGNETIC TUNNEL JUNCTION DEVICES

Document Type and Number:

WIPO Patent Application WO2003083910

Kind Code:

B1

Abstract:

Magnetic tunneling junction devices (MTJ) useful for sensing and memory applications and characterized by reduced resistance, magnetic noise, increased sensitivity, and increased magnetoresistance are disclosed herein. A method for fabrication of said MTJ is also disclosed wherein a series of materials are layered upon a substrate under controlled conditions, patterned and subjected to a period of annealing for simultaneously optimizing a plurality of performance parameters.

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Inventors:

XIAO GANG
LIU XIAOYONG

Application Number:

PCT/US2003/005663

Publication Date:

December 18, 2003

Filing Date:

February 26, 2003

Export Citation:

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Assignee:

UNIV BROWN RES FOUND (US)

International Classes:

H01F10/32; H01F41/30; H01L43/12; (IPC1-7): H01L21/00

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