Title:
REFERENCE VOLTAGE GENERATION CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2019/215866
Kind Code:
A1
Abstract:
This reference voltage generation circuit is provided with a series circuit of first and second field-effect transistors (M11, M12) respectively having different threshold voltages (VTH11, VTHM12), the series circuit being connected between a power supply voltage (VDD) and the ground voltage (GND). In the reference voltage generation circuit, the gate and the source of the first field-effect transistor (M11) are connected to the gate and the drain of the second field-effect transistor (M12) at a prescribed connection point (P1). The reference voltage generation circuit is further provided with voltage sources (1, 2) that apply a prescribed bias voltage (Vb1, Vb2) to the back gate of at least one of the first and second field-effect transistors (M11, M12), and thus corrects the temperature characteristics of a reference voltage generated at the connection point.
Inventors:
HAGINO KOICHI (JP)
Application Number:
PCT/JP2018/018086
Publication Date:
November 14, 2019
Filing Date:
May 10, 2018
Export Citation:
Assignee:
RICOH ELECTRONIC DEVICES CO LTD (JP)
International Classes:
G05F3/24; G05F1/56
Foreign References:
| JP2005134939A | 2005-05-26 | |||
| JP2010165071A | 2010-07-29 | |||
| JP2008021038A | 2008-01-31 | |||
| JP2013115056A | 2013-06-10 | |||
| JP2002236521A | 2002-08-23 |
Attorney, Agent or Firm:
YAMAO, Norihito et al. (JP)
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