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Title:
REFERENCE VOLTAGE OPTIMIZATION FOR FLASH MEMORY
Document Type and Number:
WIPO Patent Application WO/2010/141650
Kind Code:
A3
Abstract:
A system includes a voltage generator and a reference voltage setting module. The voltage generator is configured to generate K voltages to be applied to memory cells. The K voltages are used to determine a reference voltage used to read the memory cells, where K is an integer greater than 1. The reference voltage setting module is configured to selectively set the reference voltage to a value between two adjacent ones of the K voltages or one of the two adjacent ones of the K voltages.

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Inventors:
YANG XUESHI (US)
Application Number:
PCT/US2010/037155
Publication Date:
August 11, 2011
Filing Date:
June 03, 2010
Export Citation:
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Assignee:
MARVELL WORLD TRADE LTD (BB)
YANG XUESHI (US)
International Classes:
G11C16/30; G11C16/26
Foreign References:
US20030169621A12003-09-11
US20070159891A12007-07-12
Attorney, Agent or Firm:
WIGGINS, Michael D. et al. (Dickey & Pierce P.L.C.,P.O. Box 82, Bloomfield Hills Michigan, US)
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