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Title:
REFLECTION ELEMENT OF EXPOSURE LIGHT AND PRODUCTION METHOD THEREFOR, MASK, EXPOSURE SYSTEM, AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2003/089964
Kind Code:
A1
Abstract:
A reflection element of an exposure light which allows a dependency of reflectance on wavelength after going through a plurality of reflection planes to agree with the exposure center wavelength of an exposure light even allowing for variations in thickness or the like to some extent to thereby ensure a sufficient energy reaching an object of exposure and a production method therefore, a mask, an exposure system, and a production method of a semiconductor device. A reflection element of an exposure light, used when an exposure is performed on an object of exposure in a lithography process for fabricating a semiconductor device, is so constructed as to have a multi-layer film structure consisting of a plurality of layers repeatedly laminated in the same sequence. During the laminating, the cycle length of a repeating laminate unit in the multi-layer film structure is set so that the half width of a reflectance agrees with the center wavelength of a ultra-short ultraviolet ray to be reflected when a specified number of reflection elements are passed through (S102).

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Inventors:
SUGAWARA MINORU (JP)
Application Number:
PCT/JP2003/005000
Publication Date:
October 30, 2003
Filing Date:
April 18, 2003
Export Citation:
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Assignee:
SONY CORP (JP)
SUGAWARA MINORU (JP)
International Classes:
G02B5/08; G02B5/20; G02B5/26; G02B5/28; G03F1/22; G03F1/24; G03F1/26; G03F1/32; G03F7/20; H01L21/027; (IPC1-7): G02B5/26; G02B5/08; G02B5/28; G03F1/16; G03F7/20; G21K1/06; H01L21/027
Foreign References:
US6333961B12001-12-25
JP2001237174A2001-08-31
JP2001027699A2001-01-30
Other References:
See also references of EP 1498750A4
Attorney, Agent or Firm:
Nakamura, Tomoyuki c/o Miyoshi International Patent Office (9th Floor Toranomon Daiichi Building, 2-3, Toranomon 1-chom, Minato-ku Tokyo, JP)
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