Title:
REFLECTION TYPE MASK BLANK AND REFLECTION TYPE MASK AND PRODUCTION METHODS FOR THEM
Document Type and Number:
WIPO Patent Application WO2003085709
Kind Code:
A9
Abstract:
A reflection type mask blank comprising a substrate (11), and, sequentially formed thereon, a reflection layer (12) for reflecting an exposure light in a short-wave region including an extreme ultraviolet region and an absorber layer (16) for absorbing an exposure light. The absorber layer (16) has a structure of at least two layers consisting of as a lower layer an exposure light absorbing layer (14) composed of an absorber of an exposure light in a short-wave region including an extreme ultraviolet region, and as an upper layer a low-reflectance layer (15) composed of an absorber of an inspection light used for mask pattern inspection. The upper layer consists of a material containing tantalum (Ta), boron (B) and nitrogen (N), B content being 5 at%-30 at%, a composition ratio between Ta and N (Ta:N) being 8:1 to 2:7. Alternatively, the reflection type mask blank may comprise a substrate, and, sequentially formed thereon, a multi-layer reflection film and an absorber layer, wherein the absorber layer consists of a material containing tantalum (Ta), boron (B) and nitrogen (N), B content being 5 at%-25 at%, a composition ratio between Ta and N (Ta:N) being 8:1 to 2:7.
More Like This:
Inventors:
ISHIBASHI SHINICHI (JP)
SHOKI TSUTOMU (JP)
HOSOYA MORIO (JP)
SHIOTA YUKI (JP)
KUREISHI MITSUHIRO (JP)
SHOKI TSUTOMU (JP)
HOSOYA MORIO (JP)
SHIOTA YUKI (JP)
KUREISHI MITSUHIRO (JP)
Application Number:
PCT/JP2003/004615
Publication Date:
February 24, 2005
Filing Date:
April 11, 2003
Export Citation:
Assignee:
HOYA CORP (JP)
ISHIBASHI SHINICHI (JP)
SHOKI TSUTOMU (JP)
HOSOYA MORIO (JP)
SHIOTA YUKI (JP)
KUREISHI MITSUHIRO (JP)
ISHIBASHI SHINICHI (JP)
SHOKI TSUTOMU (JP)
HOSOYA MORIO (JP)
SHIOTA YUKI (JP)
KUREISHI MITSUHIRO (JP)
International Classes:
G03F1/52; G03F1/50; H01L21/027; G03F1/00; (IPC1-7): H01L21/027; G03F1/16
Download PDF: