Title:
REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND SUBSTRATE WITH CONDUCTIVE FILM
Document Type and Number:
WIPO Patent Application WO/2023/054037
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide, in order to enable defect inspection after the formation of a conductive film, a conductive film having low transmittance in a wavelength range including Ar laser inspection light (a wavelength of 488 nm) and having high transmittance in a wavelength range including Nd:YAG laser (a wavelength of 1064 nm) and He:Ne laser (a wavelength of 632 nm) that are used to improve substrate deformation caused by internal stress of a multilayer reflection film and an absorption film. Provided is a reflective mask blank for EUV lithography having a conductive film (12) on the back surface side of a substrate (11), the reflective mask blank being configured such that the refractive index and extinction coefficient at wavelengths of 1000-1100 nm of the conductive film (12), the refractive index and extinction coefficient at wavelengths of 600-700 nm of the conductive film (12), the refractive index and extinction coefficient at wavelengths of 400-500 nm of the conductive film (12), and the film thickness t of the conductive film (12) each fall within a specific range.
Inventors:
ONO YUSUKE (JP)
HANEKAWA HIROSHI (JP)
KAWAHARA HIROTOMO (JP)
HANEKAWA HIROSHI (JP)
KAWAHARA HIROTOMO (JP)
Application Number:
PCT/JP2022/034854
Publication Date:
April 06, 2023
Filing Date:
September 16, 2022
Export Citation:
Assignee:
AGC INC (JP)
International Classes:
G03F1/24; G03F1/40
Foreign References:
| JP2019035848A | 2019-03-07 | |||
| JP2021128247A | 2021-09-02 | |||
| JP2011124612A | 2011-06-23 | |||
| JP2010286632A | 2010-12-24 |
Attorney, Agent or Firm:
EIKOH PATENT FIRM, P.C. (JP)
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