REFLECTIVE MASK BLANK, MANUFACTURING METHOD THEREOF, AND REFLECTIVE MASK

WIPO Patent Application WO/2012/014495

A1

[Problem] To resolve the problem that employing high-contrast photoresist that is typically used when producing a reflective mask causes accumulated energy and CD linearity to deteriorate owing to backscatter. [Solution] A reflective mask blank for producing a reflective mask comprises: a substrate; a multilayered reflecting film that is formed on the substrate and that reflects exposure light; and an absorbing body film, formed on the multilayered reflecting film, which absorbs exposure light. A photoresist film for electron beam etching is disposed on the absorbing body film, and the contrast γ of the photoresist film for electron beam etching is 30 or less.

HASHIMOTO, Masahiro (7-5 Naka-Ochiai 2-chome, Shinjuku-k, Tokyo 25, 〒1618525, JP)
橋本　雅広 (〒25 東京都新宿区中落合２丁目７番５号ＨＯＹＡ株式会社内 Tokyo, 〒1618525, JP)
ONO, Kazunori (7-5 Naka-Ochiai 2-chome, Shinjuku-k, Tokyo 25, 〒1618525, JP)
小野　一法 (〒25 東京都新宿区中落合２丁目７番５号ＨＯＹＡ株式会社内 Tokyo, 〒1618525, JP)

JP2011/004321

February 02, 2012

July 29, 2011

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HOYA CORPORATION (7-5 Naka-Ochiai 2-chome, Shinjuku-ku Tokyo, 25, 〒1618525, JP)
ＨＯＹＡ株式会社 (〒25 東京都新宿区中落合２丁目７番５号 Tokyo, 〒1618525, JP)
HASHIMOTO, Masahiro (7-5 Naka-Ochiai 2-chome, Shinjuku-k, Tokyo 25, 〒1618525, JP)
橋本　雅広 (〒25 東京都新宿区中落合２丁目７番５号ＨＯＹＡ株式会社内 Tokyo, 〒1618525, JP)
ONO, Kazunori (7-5 Naka-Ochiai 2-chome, Shinjuku-k, Tokyo 25, 〒1618525, JP)

H01L21/027

FUJIMURA, Yasuo (Room 834, Winaoyama Bldg. 2-15, Minamiaoyma 2-chome, Minato-k, Tokyo 62, 〒1070062, JP)

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