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Title:
REFLECTIVE MASK BLANK, REFLECTIVE MASK, REFLECTIVE MASK BLANK MANUFACTURING METHOD, AND REFLECTIVE MASK MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2024/053634
Kind Code:
A1
Abstract:
This reflective mask blank comprises a substrate, a multilayer reflective film that reflects EUV light, a protective film that protects the multilayer reflective film, and a phase shift film that shifts the phase of the EUV light in this order, wherein the phase shift film comprises an Os-based material containing 35 atom% or more of Os, a refractive index n with respect to the EUV light is 0.940 or less, and an extinction coefficient k is 0.025 or more.

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Inventors:
AKAGI DAIJIRO (JP)
OKATO TAKESHI (JP)
IWAOKA HIROAKI (JP)
Application Number:
PCT/JP2023/032335
Publication Date:
March 14, 2024
Filing Date:
September 05, 2023
Export Citation:
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Assignee:
AGC INC (JP)
International Classes:
G03F1/24; G03F1/32
Domestic Patent References:
WO2022138360A12022-06-30
Foreign References:
JP2021071685A2021-05-06
JPH07114173A1995-05-02
KR20170021191A2017-02-27
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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