REFLECTIVE MASK BLANK, METHOD FOR MANUFACTURING SAME, REFLECTIVE MASK, METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2016/043147

A1

The purpose of the present invention is to provide a low defect reflective mask blank that has a multilayer reflective film with high smoothness and wherein charging-up during mask defect inspection by an electron beam is prevented, a reflective mask, and a method for manufacturing the same. Provided is a reflective mask blank (100) for EUV lithography that has a conductive underlying film (4), a multilayer reflective film (5) for reflecting exposure light, and an absorption body film (7) for absorbing exposure light laminated on a substrate (1), wherein the conductive underlying film is formed from a single layer film of a tantalum based material or a ruthenium based material with a film thickness of 1 - 10 nm provided adjacent to the multilayer reflective film, or is formed from a laminated film that includes a tantalum based material layer with a film thickness of 1 - 10 nm provided adjacent to the multilayer reflective film and a conductive material layer provided between the tantalum based material layer and the substrate. Also provided is a reflective mask manufactured using that mask blank. In addition, a semiconductor device is manufactured using this reflective mask.

SHOKI TSUTOMU (JP)
ASAKAWA TATSUO (JP)
KOZAKAI HIROFUMI (JP)

PCT/JP2015/075970

March 24, 2016

September 14, 2015

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HOYA CORP (JP)

G03F1/24; C23C14/14; C23C14/34; C23C14/46; G03F1/86

WO2012105698A1	2012-08-09
WO2012121159A1	2012-09-13

JP2009212220A	2009-09-17
JP2013225662A	2013-10-31
JP2014096484A	2014-05-22
JPH08293450A	1996-11-05
JP2011192693A	2011-09-29
JP2012204708A	2012-10-22

NAGATA, Yutaka et al. (JP)
Yutaka Nagata (JP)

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