Title:
REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/137928
Kind Code:
A1
Abstract:
The present invention provides: a reflective mask blank which is capable of accurately transferring a pattern to a transfer-receiving body; a reflective mask; and a method for producing a semiconductor device. A reflective mask blank (100) according to the present invention comprises: a substrate (10); a multilayer reflective film (12) which is formed on the substrate (10) and reflects EUV light; and a laminate film (16) which is formed on the multilayer reflective film (12). The laminate film (16) has an absolute reflectance of 2.5% or less with respect to EUV light, and comprises a first layer (18) and a second layer (20) that is formed on the first layer (18); and the first layer (18) comprises a phase shift film which shifts the phase of EUV light. Alternatively, the laminate film (16) is a phase shift film which comprises a first layer (18) and a second layer (20) that is formed on the first layer (18), and which shifts the phase of EUV light; and the first layer (18) comprises an absorption layer that has an absolute reflectance of 2.5% or less with respect to EUV light.
Inventors:
IKEBE YOHEI (JP)
Application Number:
PCT/JP2019/050236
Publication Date:
July 02, 2020
Filing Date:
December 23, 2019
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/24; C23C14/06; G03F1/58
Foreign References:
| JP2016046370A | 2016-04-04 | |||
| JP2002280291A | 2002-09-27 | |||
| US20130260288A1 | 2013-10-03 | |||
| US20130157177A1 | 2013-06-20 | |||
| JP2010080659A | 2010-04-08 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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