Title:
REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHODS FOR PRODUCING REFLECTIVE MASK AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/225737
Kind Code:
A1
Abstract:
Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank (100) having, in the following order on a substrate (1), a multilayer reflective film (2) and a phase-shift film (4) that shifts the phase of EUV light, said reflective mask blank (100) characterized in that: the phase-shift film (4) has a first layer (41) and a second layer (42); the first layer (41) comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer (42) comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).
Inventors:
IKEBE YOHEI (JP)
SHOKI TSUTOMU (JP)
SHOKI TSUTOMU (JP)
Application Number:
PCT/JP2019/020635
Publication Date:
November 28, 2019
Filing Date:
May 24, 2019
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/24; G03F1/32; G03F7/20
Domestic Patent References:
| WO2016104239A1 | 2016-06-30 | |||
| WO2017169658A1 | 2017-10-05 | |||
| WO2015098400A1 | 2015-07-02 |
Foreign References:
| JP2012151368A | 2012-08-09 | |||
| JP2012256066A | 2012-12-27 | |||
| JP2014033221A | 2014-02-20 | |||
| JP2015122468A | 2015-07-02 | |||
| JP2015142083A | 2015-08-03 | |||
| JP2016122684A | 2016-07-07 | |||
| US20160238924A1 | 2016-08-18 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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