Title:
REFLECTIVE MASK BLANK AND REFLECTIVE MASK
Document Type and Number:
WIPO Patent Application WO/2021/230297
Kind Code:
A1
Abstract:
Provided are: a reflective mask in which a fine absorption film pattern is formed even when a high-absorption material is used as an absorption film of an EUV mask, whereby a projection effect can be lessened and electron beam modification etching can be performed; and a reflective mask blank for preparing said mask. A reflective mask blank (10) according to the present embodiment has: a substrate (1); a multi-layer reflective film (2) having a multilayer structure formed on the substrate (1), the multi-layer reflective film (2) reflecting EUV light; a capping layer (3) formed on the multi-layer reflective film (2) and protecting the multi-layer reflective film (2); and an absorption film (4) formed on the capping layer (3) and absorbing the EUV light. The absorption film (4) contains at least 50 at% of elements constituting tin oxide (SnO) and/or indium oxide (InO), and contains a material that is easily etched with a fluorine-based gas or a chlorine-based gas.
Inventors:
ICHIKAWA KENJIRO (JP)
GODA AYUMI (JP)
NAKANO HIDEAKI (JP)
GODA AYUMI (JP)
NAKANO HIDEAKI (JP)
Application Number:
PCT/JP2021/018089
Publication Date:
November 18, 2021
Filing Date:
May 12, 2021
Export Citation:
Assignee:
TOPPAN INC (JP)
International Classes:
G03F1/24
Domestic Patent References:
| WO2019009211A1 | 2019-01-10 | |||
| WO2019009212A1 | 2019-01-10 | |||
| WO1997044709A1 | 1997-11-27 | |||
| WO2011004850A1 | 2011-01-13 |
Foreign References:
| JP2019139085A | 2019-08-22 | |||
| JP2007207829A | 2007-08-16 | |||
| JP2019056898A | 2019-04-11 |
Other References:
"CRC Handbook of Chemistry and Ohysics", 2016
Attorney, Agent or Firm:
HIROSE Hajime et al. (JP)
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