Title:
REFLECTIVE MASK, REFLECTIVE MASK MANUFACTURING METHOD AND EXPOSURE APPARATUS
Document Type and Number:
WIPO Patent Application WO/2006/033442
Kind Code:
A1
Abstract:
On a substrate (1), a reflection film (2) is formed, and on the surface of the reflection film, a capping layer (3) having a thickness not preventing reflection is formed. On the capping layer (3), a buffer layer (5) and an absorbing body (4) whereupon a pattern is formed are film-formed. On the rear plane of the substrate (1), a conductive film (6) is formed to be grounded for preventing the substrate (1) from being electrostatically charged. A conductive film (7) is formed to cover the surfaces of the substrate (1), the reflection film (2), the capping layer (3), the absorbing body (4) and the buffer layer (5). The conductive film (7) is electrically continuous to the conductive film (6) and the potential is dropped to a ground level at the time of being arranged in an EUV exposure apparatus.
Inventors:
YAMAMOTO HAJIME (JP)
SHIRAISHI MASAYUKI (JP)
SHIRAISHI MASAYUKI (JP)
Application Number:
PCT/JP2005/017662
Publication Date:
March 30, 2006
Filing Date:
September 20, 2005
Export Citation:
Assignee:
NIKON CORP (JP)
YAMAMOTO HAJIME (JP)
SHIRAISHI MASAYUKI (JP)
YAMAMOTO HAJIME (JP)
SHIRAISHI MASAYUKI (JP)
International Classes:
H01L21/027; G03F1/24; G03F1/38; G03F1/40; G03F1/48; G03F7/20
Foreign References:
| JP2003133205A | 2003-05-09 | |||
| JPH08293450A | 1996-11-05 | |||
| JP2003318104A | 2003-11-07 | |||
| JP2003243292A | 2003-08-29 | |||
| JPH09306834A | 1997-11-28 | |||
| JP2002075839A | 2002-03-15 | |||
| JP2003257824A | 2003-09-12 |
Attorney, Agent or Firm:
Hosoe, Toshiaki (3-6 Nishikanagawa 1-chome, Kanagawa-k, Yokohama-shi Kanagawa 22, JP)
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