Title:
REFLECTIVE PHOTOMASK BLANK AND REFLECTIVE PHOTOMASK
Document Type and Number:
WIPO Patent Application WO/2019/009211
Kind Code:
A1
Abstract:
A reflective photomask blank (10) according to one embodiment of the present invention comprises a substrate (1), a reflective layer (2) that is formed on the substrate (1), and a light absorption layer (4) that is formed on the reflective layer (2). The light absorption layer (4) comprises a tin oxide film which has a film thickness of from 25 nm to 45 nm (inclusive), and which has an atomic ratio of oxygen (O) to tin (Sn), namely O/Sn of more than 1.50 but 2.0 or less. Consequently, the projection effect of a reflective photomask for pattern transfer using extreme ultraviolet light as a light source is suppressed or reduced, thereby improving the transfer performance to a semiconductor substrate, while improving the cleaning resistance of the light absorption layer.
Inventors:
FUKUGAMI NORIHITO (JP)
KOMIZO TORU (JP)
KOMIZO TORU (JP)
Application Number:
PCT/JP2018/024889
Publication Date:
January 10, 2019
Filing Date:
June 29, 2018
Export Citation:
Assignee:
TOPPAN PRINTING CO LTD (JP)
International Classes:
G03F1/24
Domestic Patent References:
| WO2010113700A1 | 2010-10-07 |
Foreign References:
| JP2013532381A | 2013-08-15 | |||
| JP2010103463A | 2010-05-06 | |||
| JP2009099931A | 2009-05-07 | |||
| JP2011176162A | 2011-09-08 |
Other References:
See also references of EP 3650936A4
Attorney, Agent or Firm:
HIROSE Hajime et al. (JP)
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